Ge:Ga far-infrared photoconductor with a low Ga concentration of 1 × 1014 cm-3

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 A, 1997, Pages 4262-4266

  Fujiwara, Mikio ^a   Hiromoto, Norihisa ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

Extrinsic semiconductor; Far infrared; Germanium doped with gallium; Photoconductor; Slow transient response

Indexed keywords

EXTRINSIC SEMICONDUCTOR; FAR INFRARED; HOLE MOBILITY; PHOTON INFLUX; RESPONSIVITY; SLOW TRANSIENT RESPONSE;

COMPUTER SIMULATION; OHMIC CONTACTS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING;

PHOTOCONDUCTING MATERIALS;

EID: 0031189838     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.4262     Document Type: Article

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