Transient response in doped germanium photoconductors under very low background operation

Applied Optics

Volumn 35, Issue 10, 1996, Pages 1597-1604

  Church, S E ^a,b   Price, M C ^a   Haegel, N M ^c   Griffin, M J ^a   Ade, P A R ^a  

^a QUEEN MARY UNIVERSITY OF LONDON   (United Kingdom)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c FAIRFIELD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; ELECTRIC FIELD EFFECTS; INFRARED SPECTROSCOPY; LIGHTING; MATHEMATICAL MODELS; PHOTONS; SEMICONDUCTING GERMANIUM; SPACECRAFT EQUIPMENT; SPECTROMETERS; THERMAL EFFECTS;

DOPED GERMANIUM PHOTOCONDUCTORS; ILLUMINATION STEP SIZE; LONG WAVELENGTH SPECTROMETERS; NONLINEAR EFFECTS; PHOTON FLUX; SPONTANEOUS SPIKING; TRANSIENT RESPONSE;

PHOTOCONDUCTING DEVICES;

EID: 0030120748     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.35.001597     Document Type: Article

References (17)

1. P. R. Bratt, Impurity germanium and Silicon infrared detec-tors, Semicond. Semimet. 12, 39-142 (1977).
2. S. W. Teitsworth, R. M. Westervelt, and E. E. Haller, Nonlinear oscillations and chaos in electrical breakdown in Ge, Phys. Rev. Lett. 51, 825-828 (1983).
3. 1 formation, Phys. Rev. B 39, 3677-3682 (1989).
4. N. M. Haegel and E. E. Haller, Transient response of Ge:Be and Ge:Zn far-infrared photoconductors under low background photon flux conditions, Infrared Phys. 26, 247-261 (1986).
5. N. Sclar, Properties of doped silicon and germanium infrared detectors, Prog. Quantum Electron. 9, 149-257 (1984).
6. J. W. Wensink, W. Luinge, D. Beintema, E. A. Valentijn, T. de Graauw, R. Katterloher, L. Barl, and E. T. Young, Charac-teristics of the ISO Short Wavelength Spectrometer detec tors, ” in Proceedings of the European Space Agency Symposium on Photon Detectors for Space Instrumentation (ESA, Nordwijk, 1992), SP-356, pp. 339-344. Battelle-Institut e.V., Am Römerhof 35, D-6000 Frankfurt a.M. 90, Germany.
7. M. Overhamm, Battelle-Institut e.V., Am Romerhof 35, D-6000 Frankfurt a.M. 90, Germany (personal communication, 1992).
8. N. Sclar, Properties of doped silicon and germanium infrared detectors, Prog. Quantum Electron. 9, 149-257 (1984).
9. Model TRS, Infrared Labs, Tucson, Ariz. 85719.
10. S. E. Church, M. J. Griffin, P. A. R. Ade, M. C. Price, R. J. Emery, and B. M. Swinyard, Calibration and performance testing of doped-germanium photoconductors for the ISO Long Wavelength Spectrometer, Infrared Phys. 34, 389-406 (1993).
11. Model JF4, Infrared Labs, Tucson, Ariz. 85719.
12. S. M. Ryvkin, Photoelectric Effects in Semiconductors (Consultants Bureau, New York, 1964).
13. B. I. Fouks, Non-stationary behavior of low background photon detectors, in Proceedings of the ESA Symposium on Photon Detectors for Space Instrumentation (European Space Agency, Noordwijk, 1992), SP-356, pp. 167-174, and refer-ences therein.
14. N. M. Haegel, C. A. Latasa, and A. M. White, Transient response of infrared photoconductors: the roles of contacts and space charge, Appl. Phys. A56, 15-21 (1993).
15. 1 in germanium, Phys. Rev. Lett. 51, 1089-1091 (1983).
16. E. I. Gershenzon, G. N. Gol’tsman, A. P. Mel’nikov, Binding energy of a carrier with a neutral impurity atom in germanium and in silicon, Pis’ma Zh. Eksp. Teor. Fiz. 14, 281-282 (1971) [JETPLett. 14, 185-186 (1971)].
17. M. C. Price, M. J. Griffin, S. E. Church, A. G. Murray, and P. A. R. Ade, Ionising radiation induced effects in doped germanium FIR photoconductors, in Proceedings ofthe European Space Agency Symposium on Photon Detectors for Space Instrumentation (ESA, Nordwijk, 1992), SP-356, pp. 309-312.