Ge:Ga far-infrared photoconductors for space applications

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 3, 1996, Pages 1676-1680

  Hiromoto, Norihisa ^a   Fujiwara, Mikio ^a   Shibai, Hiroshi ^b   Okuda, Haruyuki ^b  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

Author keywords

Extrinsic semiconductor; Far infrared; Germanium doped with gallium; Photoconductor; Slow transient response

Indexed keywords

ELECTRIC CURRENTS; LOW TEMPERATURE EFFECTS; MATHEMATICAL MODELS; PHOTOCONDUCTING MATERIALS; PHOTONS; SEMICONDUCTING GALLIUM; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SPACE APPLICATIONS; SPECIFICATIONS;

CHOPPING FREQUENCY; EXTRINSIC SEMICONDUCTOR; FAR INFRARED LINE MAPPER; FAR INFRARED PHOTOCONDUCTORS; INFRARED TELESCOPE IN SPACE; NOISE EQUIVALENT POWER; PHOTON FLUX; SLOW TRANSIENT RESPONSE; TWO REGION MODEL;

PHOTOCONDUCTING DEVICES;

EID: 0030101703     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1676     Document Type: Article

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