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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 15, Issue 4, 1997, Pages 1512-1515

Detection mechanism of an optical evanescent field using a noncontact mode atomic force microscope with a frequency modulation detection method

(6) Abe, Masayuki a Uchihashi, Takayuki a Ohta, Masahiro b Ueyama, Hitoshi b Sugawara, Yasuhiro b Morita, Seizo b

a HIROSHIMA UNIVERSITY (Japan)

b OSAKA UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC FIELDS; FERMI LEVEL; FREQUENCY MODULATION; HELIUM NEON LASERS; LASER BEAMS; PRISMS; SEMICONDUCTOR LASERS; VACUUM TECHNOLOGY; VAN DER WAALS FORCES;

BIAS VOLTAGE; EVANESCENT FIELD; INCIDENT BEAM INTENSITY; NONCONTACT MODE; PHOTOTHERMAL EFFECT; SURFACE PHOTOVOLTAGE EFFECT;

ATOMIC FORCE MICROSCOPY;

EID: 0031189132 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.589485 Document Type: Article

Times cited : (9)

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