Electrooptic polarization modulation in [110]-oriented GaAs-InGaAs multiple quantum wells

IEEE Journal of Quantum Electronics

Volumn 33, Issue 7, 1997, Pages 1114-1122

  Snelling, M J ^b   Huang, X R ^b   Harken, Dean R ^a,b   Smirl, Arthur L ^a,b   Towe, Elias ^a,c  

^a IEEE

^b UNIVERSITY OF IOWA   (United States)

^c UNIVERSITY OF VIRGINIA   (United States)

Author keywords

Anisotropic media; Birefringence; Electrooptic materials devices; Optical polarization; Quantum confined Stark effect; Quantum well devices; Spatial light modulators; Strain

Indexed keywords

BANDWIDTH; BIREFRINGENCE; ELECTROCHROMISM; ELECTROOPTICAL DEVICES; ELLIPSOMETRY; LIGHT MODULATION; LIGHT POLARIZATION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CONTRAST RATIO; DICHROISM; ELECTROOPTIC MODULATORS; ELECTROOPTIC POLARIZATION MODULATION; ELLIPTICITY; OPTICAL BANDWIDTH; QUANTUM CONFINED STARK EFFECTS (QCSE); SPATIAL LIGHT MODULATORS; WAVELENGTH;

LIGHT MODULATORS;

EID: 0031188658     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.594873     Document Type: Article

References (23)

1. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Electric field dependence of optical absorption near the band gap of quantum well structures," Phys. Rev. B, vol. 28, pp. 1043-1060, 1985.
2. K. W. Jelley, R. W. H. Engelmann, K. Alavi, and H. Lee, "Well size related limitations on maximum electroabsorption in GaAs/AlGaAs multiple quantum well structures," Appl. Phys. Lett., vol. 55, pp. 70-72, 1989.
3. D. A. B. Miller, "Quantum-well self-electro-optic effect devices," Opt. Quantum Electron., vol. 22, pp. S61-S98, 1990.
4. K.-K. Law, R. H. Yan, L. A. Coldren and J. L. Merz, "Self-electrooptic devices based on a superlattice asymmetric Fabry-Perot modulator with an on-off ratio greater than 100-1," Appl. Phys. Lett., vol. 57, pp. 1345-1347, 1990.
5. C.-H. Lin, K. W. Goossen, K. Sadra and J. M. Meese, "Normally-on GaAs/AlAs multiple quantum well Fabry-Perot reflection modulators for large 2-dimensional arrays," Appl. Phys. Lett., vol. 65, pp. 1242-1244, 1994.
6. B. Pezeshki, D. Thomas, and J. S. Harris, "Optimization of modulation ratio and insertion loss in reflective electroabsorption modulators," Appl. Phys. Lett., vol. 57, pp. 1491-1492, 1990.
7. K. W. Goosen, J. E. Cunningham, W. Y. Jan and D. A. B. Miller, "Interleaved contact electroabsorption modulator using doping selective contacts with 25°C to 95°C operating range," IEEE Photon. Technol. Lett., vol. 5, pp. 181-183, 1993.
8. K. W. Goosen, J. E. Cunningham, W. Y. Jan, "Optical bandwidth considerations in p-i-n multiple quantum well modulators," J. Lightwave Technol., vol. 13, pp. 461-464, 1995.
9. R. Windisch, M. Kneissl, P. Kiesel, B. Knüpfer, and G. H. Döhler, "Low voltage high-contrast n-i-p-i based waveguide modulators with alloyed selective contacts," IEEE Photon. Technol. Lett., vol. 10, pp. 1325-1327, 1996.
10. X. R. Huang, S. K. Cheung, A. N. Cartwright, A. L. Smirl, W. F. Tseng, and J. G. Pellegrino, "An interdigitated stacked p-i-n multiple quantum well modulator," IEEE Photon. Technol. Lett., vol. 8, pp. 1172-1174, 1996.
11. W. A. Schroeder, D. S. McCallum, D. R. Harken, M. D. Dvorak, D. R. Andersen, and A. L. Smirl, "Intrinsic and induced anisotropy of nonlinear absorption and refraction in zincblende semiconductors," J. Opt. Soc. Amer. B, vol. 12, pp. 401-415, 1995.
12. H. Shen, M. Wraback, J. Pamulapati, P. G. Newman, M. Dutta, Y. Lu and H. C. Kuo, "Optical anisotropy in GaAs/AlGaAs multiple quantum wells under thermally-induced uniaxial strain," Phys. Rev., vol. 47, pp. 13933-13936, 1993.
13. H. Shen, M. Wraback, J. Pamulapati, M. Dutta, P. G. Newman, A. Ballato, and Y. Lu, "Normal incidence high contrast multiple quantum well light modulator based on polarization rotation," Appl. Phys. Lett., vol. 62, pp. 2908-2910, 1993.
14. H. Shen, J. Pamulapati, M. Wraback, M. Taysing-Lara, M. Dutta, H. C. Kuo, and Y. Lu, "High contrast optical modulator based on electrically tunable polarization rotation and phase retardation in uniaxially strained (100) multiple quantum wells," IEEE Photon. Technol. Lett., vol. 6, pp. 700-702, 1994
15. Y. Kajikawa, M. Hata, and T. Isu, "Optical matrix elements in (110)-oriented quantum wells," Jpn. J. Appl. Phys., vol. 30, pp. 1944-45, 1991.
16. Y. Kajikawa, "Anomaly in the in-plane polarization properties of (110)-oriented quantum wells under [110] uniaxial stress," Phys. Rev. B, vol. 47, pp. 3649-3660, 1993.
17. R. H. Henderson and E. Towe, "Strain and crystallographic orientation effects on interband optical matrix elements and band gaps of [11ℓ]-orientated III-V epilayers," J. Appl. Phys., vol. 78, pp. 2447-2455, 1995
18. _, "Effective mass theory for III-V semiconductors on arbitrary (hkl) surfaces," J. Appl. Phys., vol. 79, pp. 2029-2037, 1995
19. Y. Kajikawa, M. Hata, T. Isu, and Y. Katayama, "Linear polarization effects in (110) quantum wells for light propagating perpendicular to the well planes," Surf. Sci., vol. 267, pp. 501-504, 1992.
20. D. Sun, E. Towe, M. J. Hayduk, and R. K. Boncek, "Observation of polarization-dependent electroabsorption in (In,Ga)As/GaAs modulator structures oriented in the [110] crystallographic direction," Appl. Phys. Lett., vol. 63, pp. 2881-2883, 1993.
21. D. Sun, E. Towe, P. H. Ostdiek, J. W. Grantham, and G. J. Vansuch, "Polarization control of vertical-cavity surface emitting lasers through the use of an anisotropy gain distribution in [110]-orientated strained quantum-well structures," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 674-680, 1995.
22. D. S. McCallum, X. R. Hung, A. L. Smirl, D. Sun, and E. Towe, "Polarization rotation modulator in a strained [110]-oriented multiple quantum well," Appl. Phys. Lett., vol. 64, pp. 2885-2887, 1995.
23. D. Sun and E. Towe, "Molecular beam epitaxial growth of (Al,Ga)AsGaAs heterostructures and Si doping characterization study on vicinal (110)-GaAs substrates," J. Cryst. Growth, vol. 132, pp. 166-172, 1993.