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Volumn 8, Issue 10, 1996, Pages 1325-1327

Low-voltage high-contrast n-i-p-i-based waveguide modulators with alloyed selective contacts

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CONTACTS; ELECTRIC RESISTANCE; GOLD ALLOYS; HETEROJUNCTIONS; LEAKAGE CURRENTS; LIGHT ABSORPTION; NICKEL ALLOYS; OHMIC CONTACTS; OPTICAL VARIABLES MEASUREMENT; OPTICAL WAVEGUIDES; OPTIMIZATION;

EID: 0030270387     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.536643     Document Type: Article
Times cited : (5)

References (13)
  • 1
    • 0020719355 scopus 로고
    • GaAlAs p-i-n Junction Waveguide Modulator
    • G. Lengyel, "GaAlAs p-i-n Junction Waveguide Modulator," J. Light-wave Technol., vol. LT-1, pp. 251-255, 1983.
    • (1983) J. Light-wave Technol. , vol.LT-1 , pp. 251-255
    • Lengyel, G.1
  • 4
    • 84941438060 scopus 로고
    • Doping superlattices ('n-i-p-i crystals')
    • G. H. Döhler, "Doping superlattices ('n-i-p-i crystals')," IEEE J. Quantum Electron., vol. QE-22, pp. 1682-1695, 1986.
    • (1986) IEEE J. Quantum Electron. , vol.QE-22 , pp. 1682-1695
    • Döhler, G.H.1
  • 8
    • 3342915711 scopus 로고
    • GaAs light-emitting diodes with n-i-p-i active layers fabricated by selective contact diffusion
    • D. E. Ackley, J. Mantz, H. Lee, N. Nouri, and C.-L- Shieh, "GaAs light-emitting diodes with n-i-p-i active layers fabricated by selective contact diffusion," Appl. Phys. Lett., vol. 53, pp. 125-127, 1988.
    • (1988) Appl. Phys. Lett. , vol.53 , pp. 125-127
    • Ackley, D.E.1    Mantz, J.2    Lee, H.3    Nouri, N.4    Shieh, C.-L.5
  • 9
    • 0027543045 scopus 로고
    • Intefleaved-contact electroabsorption modulator using doping-selective electrodes with 25 °C to 95 °C operating range
    • K. W. Goossen, J. E. Cunningham, W. Y. Jan, and D. A. B. Miller, "Intefleaved-contact electroabsorption modulator using doping-selective electrodes with 25 °C to 95 °C operating range," IEEE Photon. Technol. Lett., vol. 5, pp. 181-183, 1993.
    • (1993) IEEE Photon. Technol. Lett. , vol.5 , pp. 181-183
    • Goossen, K.W.1    Cunningham, J.E.2    Jan, W.Y.3    Miller, D.A.B.4
  • 11
    • 0042631016 scopus 로고
    • Ohmic contacts to p-GaAs with Au/Zn/Au structure
    • T. Sanada and O. Wada, "Ohmic contacts to p-GaAs with Au/Zn/Au structure," Jap. J. Appl. Phys., vol. 19, pp. L491-L494, 1980.
    • (1980) Jap. J. Appl. Phys. , vol.19
    • Sanada, T.1    Wada, O.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.