An interdigitated stacked p-i-n multiple-quantum-well modulator

IEEE Photonics Technology Letters

Volumn 8, Issue 9, 1996, Pages 1172-1174

  Huang, X R ^a   Cheung, S K ^a   Cartwright, A N ^a   Smirl, Arthur L ^a,c   Tseng, W F ^b,c  

^a UNIVERSITY OF IOWA   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^c IEEE

Author keywords

[No Author keywords available]

Indexed keywords

FABRICATION; HETEROJUNCTIONS; LIGHT ABSORPTION; MASKS; MOLECULAR BEAM EPITAXY; OPTICAL SWITCHES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SWITCHING;

INTERDIGITATED STACKED PIN DEVICE; MULTIPLE QUANTUM WELL; OPTICAL SWITCHING; SHADOW MASK GROWTH TECHNIQUE;

LIGHT MODULATORS;

EID: 0030241676     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.531826     Document Type: Article

References (13)

1. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Novel hybrid optically bistable switch: The quantum well self-electro-optic effect device," Appl. Phys. Lett., vol. 45, pp. 13-15, 1984.
2. D. A. B. Miller, "Quantum well self-electro-optic effect device," Opt. Quantum Electron., vol. 22, pp. S61-98, 1990.
3. H. S. Hinton and A. L. Lentine, "Multiple quantum-well technology takes SEED," IEEE Circ. Dev., vol. 9, pp. 12-18, 1993.
4. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Band-edge electroabsorption in quantum well structures: The quantum-confined Stark effect," Appl. Phys. Rev. Lett., vol. 53, pp. 2173-2176, 1984.
5. G. H. Dohler, G. Hasnain, and J. N. Miller, "In situ growth-in selective contracts to n-i-p-i doping superlattice crystals using molecular beam epitaxial growth through a shadow mask," Appl. Phys. Lett., vol. 49, pp. 704-706, 1986.
6. G. Hasnain, D. Mars, G. H. Dohler, M. Ogura, and J. S. Smith, "Doping superlattices grown in channeled GaAs substrates by molecular beam epitaxy through a built-in shadow mask," Appl. Phys. Lett., vol. 51, pp. 831-833, 1987.
7. K. H. Gulden, X. Wu, J. S. Smith, P. Kiesel, A. Höfler, M. Kneissl, P. Riel, and G. H. Dohler, "Novel shadow mask molecular beam epitaxial regrowth technique for selective doping," Appl. Phys. Lett., vol. 62, pp. 3180-3182, 1993.
8. N. Linder, T. Gabler, K. H. Gulden, P. Kiesel, M. Kneissl, P. Riel, G. H. Dohler, X. Wu, J. Walker, and J. S. Smith, "High contrast electrooptic n-i-p-i doping superlattice modulator," Appl. Phys. Lett., vol. 62, pp. 1916-1918, 1993.
9. U. Pfeiffer, M. Kneissl, B. Knüpfer, N. Müller, P. Kiessei, G. H. Döhler, and J. S. Smith, "Dynamical switching behavior of n-i-p-i modulator structures," Appl. Phys. Lett., vol. 68, pp. 1838-1840, 1996.
10. C. J. Chang-Hasnain, G. Hasnain, N. M. Johnson, G. H. Dohler, J. N. Miller, J. R. Whinnery, and A. Dienes, "Tunable electroabsorption in gallium arsenide doping superlattices," Appl. Phys. Lett., vol. 50, pp. 915-917, 1987.
11. X. Wu, K. H. Gulden, M. Thomas, J. S. Smith, J. R. Whinnery, S. Malzer, P. Kiesel, M. Kniessl, and G. H. Dohler, "Hetero-nipi band filling modulator with laterally interdigital contacts made by shadow mask molecular beam epitaxy regrowth," Appl. Phys. Lett., vol. 62, pp. 152-153, 1993.
12. O. Blum, J. E. Zucker, X. Wu, K. H. Gulden, H. Sohn, T. K. Gustafson, and J. S. Smith, "Low-voltage-tunable distributed Bragg reflector using InGaAs/GaAs quantum wells," IEEE Photon. Technol. Lett., vol. 5, pp. 695-697, 1993.
13. W. F. Tseng, D. Chandler-Horowitz, N. A. Papanicolaou, and J. B. Boos, "Interdigitated hetero InGaAs/GaAs n-i-p-i modulators," to be published in Mater. Lett.