Epitaxial growth simulation employing a combined molecular dynamics and Monte Carlo approach

Computational Materials Science

Volumn 6, Issue 2, 1996, Pages 123-126

  Grein, C H ^a   Benedek, R ^b   De La Rubia, T ^c  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MOLECULAR BEAM EPITAXY; MOLECULAR DYNAMICS; MONTE CARLO METHODS; NUCLEATION; REACTION KINETICS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON;

ADATOMS; EQUILIBRATION; INTERATOMIC INTERACTIONS; STILLINGER-WEBER POTENTIALS;

EPITAXIAL GROWTH;

EID: 0030217407     PISSN: 09270256     EISSN: None     Source Type: Journal    
DOI: 10.1016/0927-0256(96)00025-0     Document Type: Article

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