An AlGaAs/InGaAs pseudomorphic HEMT modulator driver 1C with low power dissipation for 10-gb/s optical transmission systems

IEEE Transactions on Microwave Theory and Techniques

Volumn 45, Issue 7, 1997, Pages 1058-1064

  Miyashita, Miyo ^a,b   Yoshida, Naohito ^a,b   Kojima, Yoshiki ^a,b   Kitano, Toshiaki ^b   Higashisaka, Norio ^a,b   Nakagawa, Junichi ^a,b   Takagi, Tadashi ^b   Otsubo, Mutsuyuki ^b  

^a IEEE   (Japan)

^b MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

High speed integrated circuits; Integrated circuit design; MODFET integrated circuits; Optical communication; Optical transmitters

Indexed keywords

ELECTRIC LOSSES; HIGH ELECTRON MOBILITY TRANSISTORS; INTEGRATED CIRCUIT LAYOUT; INTEGRATED OPTOELECTRONICS; MICROWAVE INTEGRATED CIRCUITS; OPTICAL COMMUNICATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSCONDUCTANCE; TRANSMITTERS; VOLTAGE CONTROL;

CASCODE CURRENT MIRROR CIRCUITS; DRIVER INTEGRATED CIRCUITS; NONRETURN-TO-ZERO (NRZ) CODING TECHNIQUE; OPTICAL TRANSMITTERS;

LIGHT MODULATORS;

EID: 0031186106     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.598441     Document Type: Article

References (9)

1. Y. Miyazaki étal., Novel current-blocking structure for high-speed EAmodulator/DFB-LD integrated light source, in IOOC-95 Tech. Dig., vol. 4, Hong Kong, June 1995, pp. 60-61.
2. N. Higashisaka et al., GaAs DCFL 2.5-Gbps 16-bit multiplexer/demultiplexer, IEEE J. Solid-State Circuits, vol. 29, pp. 808-814, July 1994.
3. Y. Suzuki et al, Pseudomorphic 2DEG FET IC's for 10-Gb/s optical communication systems with external optical modulation, IEEE J. Solid-State Circuits, vol. 27, pp. 1342-1346, Oct. 1992.
4. R. K. Montgomery et al, 10-Gbit/s AlGaAs/GaAs HBT driver 1C for lasers or lightwave modulators, IEEE Electron Device Lett., vol. 27, pp. 1827-1829, Sept. 1991.
5. H.-M. Rein et al., A versatile Si-bipolar driver circuit with high output voltage swing for external and direct laser modulation in 10-Gb/s optical-fiber links, IEEE J. Solid-State Circuits, pp. 1014-1021, Sept. 1994.
6. T. Kitano et al, Selective etching of GaAs/Al-Gai As for heterostructure field effect transistors, in Symp. SOTAPOCS XX111 Tech. Dig., Oct. 1995, vol. 95-21, pp. 327-336.
7. M. Fujii et al., An ultra low-power AlGaAs/InGaAs HJFET SCFL circuit for 10-Gbps applications with 1.3-V supply voltage, in IEEE Dig. GaAs 1C Symp., Philadelphia, PA, Oct. 1994, pp. 51-54.
8. K. Ishikawa et al., A large-output optical modulator driver-IC for 10-Gb/s optical transmission systems, in Proc. IEICE General Conf., Sendai, Japan, Sept. 1994, C-433.
9. M. Miyashita et al, A GaAs LD driver 1C for 2.5 Gb/s optical communication system, in 24th European Microwave Conf. Proc., vol. 2, Cannes, France, Sept. 1994, pp. 1649-1654.