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1
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0027107067
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30 Gbit/s Si multiplexer and demultiplexer ICs in silicon bipolar technologies
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Jan.
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H.-M. Rein, J. Hauenschild, M. Moller, W. McFarland, D. Pettengill, and J. Doemberg, “30 Gbit/s Si multiplexer and demultiplexer ICs in silicon bipolar technologies,” Electron. Lett., vol. 28, pp. 97-99, Jan. 1992.
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(1992)
Electron. Lett.
, vol.28
, pp. 97-99
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-
Rein, H.-M.1
Hauenschild, J.2
Moller, M.3
McFarland, W.4
Pettengill, D.5
Doemberg, J.6
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2
-
-
84939378388
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A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology
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Minneapolis, MN, Oct.
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J. Hauenschild, A. Felder, M. Kerber, H.-M. Rein and L. Schmidt, “A 22 Gb/s decision circuit and a 32 Gb/s regenerating demultiplexer IC fabricated in silicon bipolar technology,” in Proc. IEEE 1992 BCTM, Minneapolis, MN, Oct. 1992, pp. 151-154.
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(1992)
Proc. IEEE 1992 BCTM
, pp. 151-154
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Hauenschild, J.1
Felder, A.2
Kerber, M.3
Rein, H.-M.4
Schmidt, L.5
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3
-
-
33747028085
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25 to 40 Gb/s ICs in a 0.8 µm silicon selective epitaxy bipolar technology
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San Francisco, CA, Dig. Tech. Papers, 281, Feb.
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A. Felder, R. Stengl, J. Hauenschild, H.-M. Rein, and T. Meister, “25 to 40 Gb/s ICs in a 0.8 µm silicon selective epitaxy bipolar technology,” ISSCC ’93, San Francisco, CA, Dig. Tech. Papers, pp. 156-157, 281, Feb. 1993.
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(1993)
ISSCC ’93
, pp. 156-157
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-
Felder, A.1
Stengl, R.2
Hauenschild, J.3
Rein, H.-M.4
Meister, T.5
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4
-
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0027908389
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A 13 Gbit/s Si bipolar preamplifier for optical front ends
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March
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M. Neuhäuser, H.-M. Rein, H. Wernz and A. Felder, “A 13 Gbit/s Si bipolar preamplifier for optical front ends,” Electron. Lett., vol. 29, pp. 492-493, March 1993.
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(1993)
Electron. Lett.
, vol.29
, pp. 492-493
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-
Neuhäuser, M.1
Rein, H.-M.2
Wernz, H.3
Felder, A.4
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5
-
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0028468458
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13 Gb/s Si-bipolar AGC amplifier IC with high gain and wide dynamic range for optical-fiber receivers
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July
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M. Moller, H.-M. Rein and H. Wernz, “13 Gb/s Si-bipolar AGC amplifier IC with high gain and wide dynamic range for optical-fiber receivers,” IEEE J. Solid-State Circuits, vol. 29, pp. 815-822, July 1994.
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(1994)
IEEE J. Solid-State Circuits
, vol.29
, pp. 815-822
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-
Moller, M.1
Rein, H.-M.2
Wernz, H.3
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6
-
-
0027109209
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A silicon bipolar laser and line driver IC with symmetrical output pulse shape operating up to 12 Gbit/s
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July
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H.-M. Rein, E. Bertagnolli, A. Felder and L. Schmidt, “A silicon bipolar laser and line driver IC with symmetrical output pulse shape operating up to 12 Gbit/s,” Electron. Lett., vol. 28, pp. 1295-1296, July 1992.
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(1992)
Electron. Lett.
, vol.28
, pp. 1295-1296
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-
Rein, H.-M.1
Bertagnolli, E.2
Felder, A.3
Schmidt, L.4
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7
-
-
84941862777
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Low power (4 mW, 10 GHz) and high speed (19 GHz, 160 mW) silicon bipolar static frequency dividers
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Minneapolis, MN, Oct.
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A. Felder, J. Hauenschild, M. Kerber and H.-M. Rein, “Low power (4 mW, 10 GHz) and high speed (19 GHz, 160 mW) silicon bipolar static frequency dividers,” Proc. IEEE 1992 BCTM, Minneapolis, MN, Oct. 1992, pp. 159-162.
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(1992)
Proc. IEEE 1992 BCTM
, pp. 159-162
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-
Felder, A.1
Hauenschild, J.2
Kerber, M.3
Rein, H.-M.4
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8
-
-
0021437222
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Modulation induced transient chirping in single frequency lasers
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R. A. Linke, “Modulation induced transient chirping in single frequency lasers,” IEEE J. Quantum Electron., vol. 21, pp. 593-597, 1985.
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(1985)
IEEE J. Quantum Electron.
, vol.21
, pp. 593-597
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-
Linke, R.A.1
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9
-
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0024626317
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The effect of laser chirping on lightwave system performance
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J. C. Cartledge and G. S. Burley, “The effect of laser chirping on lightwave system performance,” IEEE J. Lightwave Technol., vol. 7, pp. 568-573, 1989.
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(1989)
IEEE J. Lightwave Technol.
, vol.7
, pp. 568-573
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-
Cartledge, J.C.1
Burley, G.S.2
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10
-
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0026223064
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10 Gbit/s AlGaAs/GaAs HBT driver for laser or lightwave modulators
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Sept.
-
R. K. Montgomery et al., “10 Gbit/s AlGaAs/GaAs HBT driver for laser or lightwave modulators,” Electron. Lett., vol. 27, pp. 1827-1829, Sept. 1991.
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(1991)
Electron. Lett.
, vol.27
, pp. 1827-1829
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-
Montgomery, R.K.1
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11
-
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0026941221
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Pseudomorphic 2 DEG FET IC’s for 10-Gb/s optical communication systems with external modulation
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Oct.
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Y. Suzuki et al., “Pseudomorphic 2 DEG FET IC’s for 10-Gb/s optical communication systems with external modulation,” IEEE J. Solid-State Circuits, vol. 27, pp. 1342-1346, Oct. 1992.
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(1992)
IEEE J. Solid-State Circuits
, vol.27
, pp. 1342-1346
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Suzuki, Y.1
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12
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0027841172
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A 0.8 pm 25 GHz/25 psec bipolar technology for ' ‘mobile radio’ and ' ‘ultra fast data link’ IC products
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Minneapolis, MN, Oct.
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H. Klose et al., “A 0.8 pm 25 GHz/25 psec bipolar technology for ' ‘mobile radio’ and ' ‘ultra fast data link’ IC products,” in Proc. 1993 BCTM, Minneapolis, MN, Oct. 1993, pp. 125-127.
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(1993)
Proc. 1993 BCTM
, pp. 125-127
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-
Klose, H.1
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13
-
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0026618484
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Design of a silicon bipolar laser- and line-driver IC with adjustable pulse shape and amplitude for data rates around and above 10 Gbit/s
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July
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H.-M. Rein, “Design of a silicon bipolar laser- and line-driver IC with adjustable pulse shape and amplitude for data rates around and above 10 Gbit/s,” Frequenz, vol. 46, pp. 31-37, July 1992.
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(1992)
Frequenz
, vol.46
, pp. 31-37
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Rein, H.-M.1
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14
-
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0017453811
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A simple but efficient analog computer for simulation of high-speed integrated circuits
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Feb.
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R. Ranfft and H.-M. Rein, “A simple but efficient analog computer for simulation of high-speed integrated circuits,” IEEE J. Solid-State Circuits, vol. 12, pp. 51-58, Feb. 1977.
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(1977)
IEEE J. Solid-State Circuits
, vol.12
, pp. 51-58
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Ranfft, R.1
Rein, H.-M.2
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15
-
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0023399799
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A compact physical large-signal model for high-speed bipolar transistors at high current densities, part I: One-dimensional model
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Aug.
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H. Stubing and H.-M. Rein, “A compact physical large-signal model for high-speed bipolar transistors at high current densities, part I: One-dimensional model,” IEEE Trans. Electron Devices, vol. 34, pp. 1741-1751, Aug. 1987.
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(1987)
IEEE Trans. Electron Devices
, vol.34
, pp. 1741-1751
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Stubing, H.1
Rein, H.-M.2
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16
-
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0015346596
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The influence of the base spreading resistance and the avalanche effect on the output characteristics of planar transistors
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Solid-State Electron.
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H.-M. Rein, T. Schad and R. Zühlke, “The influence of the base spreading resistance and the avalanche effect on the output characteristics of planar transistors" (in German), Solid-State Electron., vol. 15, pp. 481-500, 1972.
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(1972)
(in German)
, vol.15
, pp. 481-500
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Rein, H.-M.1
Schad, T.2
Zühlke, R.3
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17
-
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0017545138
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Relationship between transient response and output characteristics of avalanche transistors
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H.-M. Rein, “Relationship between transient response and output characteristics of avalanche transistors,” Solid-State Electron., vol. 20, pp. 849-858, 1977.
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(1977)
Solid-State Electron.
, vol.20
, pp. 849-858
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Rein, H.-M.1
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18
-
-
84889230468
-
A 12.5 Gb/s Si bipolar IC for PRBS generation and bit error detection up to 25 Gb/s
-
Dig. Tech. Papers, San Francisco, CA, Feb., 280
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M. Bußmann, U. Langmann, B. Hillery and W. W. Brown, “A 12.5 Gb/s Si bipolar IC for PRBS generation and bit error detection up to 25 Gb/s,” ISSCC’93, Dig. Tech. Papers, San Francisco, CA, Feb. 1993, pp. 152-153, 280.
-
(1993)
ISSCC’93
, pp. 152-153
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-
Bußmann, M.1
Langmann, U.2
Hillery, B.3
Brown, W.W.4
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19
-
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84907682657
-
Selective epitaxial bipolar technology for 25 to 40 Gb/s ICs
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Grenoble, France, Sept.
-
T. Meister, R. Stengl, A. Felder, H.-M. Rein and L. Treitinger, “Selective epitaxial bipolar technology for 25 to 40 Gb/s ICs,” Proc. ESSDERC’93, Grenoble, France, Sept. 1993, pp. 203-210.
-
(1993)
Proc. ESSDERC’93
, pp. 203-210
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-
Meister, T.1
Stengl, R.2
Felder, A.3
Rein, H.-M.4
Treitinger, L.5
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20
-
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0023360853
-
Multi-gigabit-per-second silicon bipolar IC’s for future optical-fiber transmission systems
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June
-
H.-M. Rein, “Multi-gigabit-per-second silicon bipolar IC’s for future optical-fiber transmission systems,” IEEE J. Solid-State Circuits, vol. 23, pp. 664-675, June 1988.
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(1988)
IEEE J. Solid-State Circuits
, vol.23
, pp. 664-675
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Rein, H.-M.1
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