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Volumn 27, Issue 10, 1992, Pages 1342-1346

Pseudomorphic 2DEG FET IC's for 10-Gb/s Optical Communication Systems with External Optical Modulation

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; LIGHT MODULATION; OPTICAL COMMUNICATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026941221     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.156435     Document Type: Article
Times cited : (13)

References (10)
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  • 2
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    • 4 Gbit/s GaAs MESFET laser driver IC
    • Aug.
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    • Chen, F.S.1
  • 3
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    • 4-Gbit/s laser diode driver GaAs IC with improved user accessibility
    • presented at the, Jan., paper WQ23.
    • T. Suzuki et al., “4-Gbit/s laser diode driver GaAs IC with improved user accessibility,” presented at the OFC, Jan. 1989, paper WQ23.
    • (1989) OFC
    • Suzuki, T.1
  • 4
    • 0024923367 scopus 로고
    • A 10-Gbit/s laser driver IC with i-AlGaAs/ n-GaAs doped-channel hetero-MISFETs (DMTs)
    • Oct.
    • Y. Suzuki et al., “A 10-Gbit/s laser driver IC with i-AlGaAs/ n-GaAs doped-channel hetero-MISFETs (DMTs),” in GaAs IC Symp. Tech. Dig., Oct. 1989, pp. 129-132.
    • (1989) GaAs IC Symp. Tech. Dig. , pp. 129-132
    • Suzuki, Y.1
  • 5
    • 0025791543 scopus 로고
    • 10 Gbit/s bipolar laser driver
    • Jan.
    • M. Banu et al., “10 Gbit/s bipolar laser driver,” Electron. Lett., vol. 27, no. 3, pp. 278–280, Jan. 1991.
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    • Banu, M.1
  • 6
    • 0025721690 scopus 로고
    • Prechirp technique for dispersion compensation for a highspeed long-span transmission
    • Jan.
    • T. Saito et al., “Prechirp technique for dispersion compensation for a highspeed long-span transmission,” IEEE Photon. Technol. Lett., vol. 13, no. 1, pp. 74–76, Jan. 1991.
    • (1991) IEEE Photon. Technol. Lett. , vol.13 , Issue.1 , pp. 74-76
    • Saito, T.1
  • 7
    • 0025434291 scopus 로고
    • 10 GHz bandwidth, 20 dB gain low-noise direct-coupled amplifier ICs using Au/WSiN GaAs MESFET
    • May
    • Y. Imai et al., “10 GHz bandwidth, 20 dB gain low-noise direct-coupled amplifier ICs using Au/WSiN GaAs MESFET,” Electron. Lett., vol. 26, no. 11, pp. 699–700, May 1990.
    • (1990) Electron. Lett. , vol.26 , Issue.11 , pp. 699-700
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  • 8
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    • Sept.
    • J. Akagi et al., “GaAs/AlGaAs HBT technology for 10 Gbit/s optical communication,” in Int. Symp. GaAs and Related Compounds Tech. Dig., Sept. 1989, pp. 695-700.
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  • 9
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    • W. T. Masselink et al., “High performance In0.l5Ga0.85As/Al0.15Gao.85As quantum well modulation doped FETs,” in IEDM Tech. Dig., Dec. 1985, pp. 755-756.
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  • 10
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.