Spatially resolved photoluminescence study on T-shaped quantum wires fabricated by cleaved edge overgrowth method

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2522-2528

  Someya, Takao ^a   Akiyama, Hidefumi ^a,b   Sakaki, Hiroyuki ^a,b  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXCITONS; HELIUM NEON LASERS; LASER APPLICATIONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

CLEAVED EDGE OVERGROWTH METHOD; EFFECTIVE LATERAL CONFINEMENT ENERGY; LASER EXCITATION; T SHAPED QUANTUM WIRES;

SEMICONDUCTOR QUANTUM WIRES;

EID: 0030105629     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361117     Document Type: Article

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