Influence of order-domain size on the optical gain of AlGaInP laser structures

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 418-423

  Geng, C ^a   Moritz, A ^a   Heppel, S ^a   Muhe A ^a   Kuhn, J ^a   Ernst, P ^a   Schweizer, H ^a   Phillipp, F ^b   Hangleiter, A ^a   Scholz, F ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

^b MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MICROSCOPIC EXAMINATION; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS;

THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0030677189     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00544-1     Document Type: Article

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