Charge dissipation on chemically treated thin silicon oxide in air

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 6 A, 1997, Pages 3755-3758

  Uchihashi, Takayuki ^a   Nakano, Akihiko ^b   Ida, Tohru ^b   Andoh, Yasuko ^c   Kaneko, Reizo ^d   Sugawara, Yasuhiro ^e   Morita, Seizo ^e  

^a HIROSHIMA UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

^c NTT CORPORATION   (Japan)

^d WAKAYAMA UNIVERSITY   (Japan)

^e OSAKA UNIVERSITY   (Japan)

Author keywords

Atomic force microscope; Charge dissipation; Charge storage; Chemical treatment; Contact electrification; Thin silicon oxide; TMS; Trimethylsilyl organosilane monolayer

Indexed keywords

CHARGE DISSIPATION; CHARGE STORAGE; CHEMICAL TREATMENT; CHEMICALLY TREATED THIN SILICON OXIDE; CONTACT ELECTRIFICATION; TRIMETHYLSILYL ORGANOSILANE MONOLAYER;

AIR; ATOMIC FORCE MICROSCOPY; DIFFUSION; ELECTRIC CHARGE; ELECTRIC LOSSES; MONOLAYERS; ORGANIC COMPOUNDS; THIN FILMS;

OXIDES;

EID: 0031169674     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.3755     Document Type: Article

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