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Volumn 74, Issue 5, 1996, Pages 1339-1346
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Density saturation of densely contact-electrified negative charges on a thin silicon oxide sample due to the coulomb repulsive force
a a a a a,c b b a
c
HITACHI LTD
(Japan)
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Author keywords
[No Author keywords available]
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Indexed keywords
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EID: 0030293506
PISSN: 01418610
EISSN: None
Source Type: Journal
DOI: 10.1080/01418619608239733 Document Type: Article |
Times cited : (3)
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References (6)
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