Reliability of mesa-structure InAlGaAs-InAlAs superlattice avalanche photodiodes

IEEE Photonics Technology Letters

Volumn 8, Issue 6, 1996, Pages 824-826

  Watanabe, I ^a   Tsuji, M ^a   Hayashi, M ^a   Makita, K ^a   Taguchi, K ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AVALANCHE DIODES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; LIGHT ABSORPTION; LOCAL AREA NETWORKS; MOLECULAR BEAM EPITAXY; POLYIMIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES;

GAIN BANDWIDTH; GAS SOURCE MOLECULAR BEAM EPITAXY; SUPERLATTICE AVALANCHE PHOTODIODE;

PHOTODIODES;

EID: 0030166737     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.502107     Document Type: Article

References (9)

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