Deep level transient spectroscopy studies of undoped and Sn-doped AlxGa1-xAs epilayers grown by liquid-phase epitaxy

Journal of Materials Science Letters

Volumn 15, Issue 13, 1996, Pages 1132-1133

  Jothilingam, R ^a,b   Saravanan, S ^a   Baskar, K ^a  

^a ANNA UNIVERSITY   (India)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CAPACITANCE MEASUREMENT; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC PROPERTIES; EPITAXIAL GROWTH; LIQUID PHASE EPITAXY; PHASE DIAGRAMS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; TIN;

DEEP DONOR LEVELS; EPILAYERS; LIQUIDUS SOLIDUS ISOTHERMS; NET IONIZED DOPING CONCENTRATION; SUPERCOOLING METHOD;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0030189627     PISSN: 02618028     EISSN: None     Source Type: Journal    
DOI: 10.1007/BF00539958     Document Type: Article

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