Dependence of Al0.48In0.52As Schottky diode properties on molecular beam epitaxial growth temperature

Applied Physics Letters

Volumn 68, Issue 2, 1996, Pages 220-222

  Brown, A S ^a   Bhattacharya, P ^b   Singh, J ^b   Zaman, P ^c   Sen, S ^c   Turco, F ^d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

^c UNIVERSITY OF CALCUTTA   (India)

^d TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042727202     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116466     Document Type: Article

References (17)

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