A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

Applied Physics Letters

Volumn 68, Issue 3, 1996, Pages 418-420

  Akazaki, Tatsushi ^a   Takayanagi, Hideaki ^a   Nitta, Junsaku ^a   Enoki, Takatomo ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001429993     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116704     Document Type: Article

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