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Volumn 406, Issue , 1996, Pages 319-325
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Reflectivity difference spectra of GaAs and ZnSe (100) surfaces
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Author keywords
[No Author keywords available]
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Indexed keywords
ATOMS;
COMPOSITION;
LIGHT MODULATORS;
PHOTOELASTICITY;
PHOTONS;
SEMICONDUCTING GALLIUM ARSENIDE;
SEMICONDUCTING ZINC COMPOUNDS;
SEMICONDUCTOR GROWTH;
STRUCTURE (COMPOSITION);
SURFACES;
CRITICAL POINT STRUCTURES;
INTERFERENCE PATTERNS;
OPTICAL BRIDGE CONFIGURATION;
PHOTOELASTIC MODULATOR;
REFLECTIVITY DIFFERENCE SPECTROSCOPY;
ZINC SELENIDE;
ELLIPSOMETRY;
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EID: 0029757247
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
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Times cited : (6)
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References (17)
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