Homogeneous and δ-doped ZnS:Mn grown by MBE

Journal of Crystal Growth

Volumn 175-176, Issue PART 1, 1997, Pages 598-602

  Schon S ^a   Chaichimansour, M ^a   Park, W ^a   Yang, T ^a   Wagner, B K ^a   Summers, C J ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION EFFECTS; DIFFUSION IN SOLIDS; FILM GROWTH; MANGANESE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUENCHING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; THIN FILMS; ZINC SULFIDE;

GAS SOURCE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0031144251     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00998-0     Document Type: Article

References (7)

1. C.B. Thomas, D. Sands, K.M. Brunson and H.S. Reehal, J. Elctrochem. Soc. 136 (1989) 1235.
2. M. Katiyar and H. Kitai, J. Lumin. 4046 (1990) 227.
3. A. Hunter and A.H. Kitai, J. Appl. Phys. 62 (1987) 4244.
4. W. Tong, T.K. Tran, W. Park, S. Schön, B.K. Wagner and C.J. Summers, Proc. 1st Int. Conf. on the Science and Technology of Display Phosphors, San Diego, USA (1995), to be published.
5. W. Tong, B.K. Wagner, T.K. Tran, W. Ogle, W. Park and C.J. Summers, J. Crystal Growth 164 (1996) 202.
6. C.J. Summers, W. Tong, T.K. Tran, W. Ogle. W. Park and B.K. Wagner, J. Crystal Growth 159 (1996) 64.
7. To be published.