Photoluminescence properties of ZnS epilayers grown by metalorganic molecular beam epitaxy

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 64-67

  Summers, C J ^a   Tong, W ^a   Tran, T K ^a   Ogle, W ^a   Park, W ^a   Wagner, B K ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BYPRODUCTS; CHEMICAL BEAM EPITAXY; EXCITONS; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTING ZINC COMPOUNDS;

BUFFER LAYER; METALORGANIC MOLECULAR BEAM EPITAXY; RADICAL ALKYL; SURFACE SITE BLOCKING;

EPITAXIAL GROWTH;

EID: 0030562429     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00824-1     Document Type: Article

References (10)

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