The role of resist for ultrathin gate oxide degradation during O2 plasma ashing

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 203-205

  Chien, Chao Hsin ^b   Chang, Chun Yen ^a,b   Lin, Horng Chih ^a,c   Chiou, Shean Guang ^c   Huang, Tiao Yuan ^a,c   Chang, Tsai Fu ^b   Hsien, Szu Kang ^b  

^a IEEE

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION; ELECTRODES; OXIDES; SEMICONDUCTOR DEVICE STRUCTURES;

ELECTRON SHADING EFFECT; PLASMA ASHING;

ULTRATHIN FILMS;

EID: 0031142280     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568764     Document Type: Article

References (9)

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