SCOPUS 정보 검색 플랫폼

Volumn 175-176, Issue PART 2, 1997, Pages 747-753

Manipulating InAs island sizes with chemical beam epitaxy growth on GaAs patterns

(7) Miller, Mark S a Landin, Lars a Jeppesen, Søren a Petersson, Anders a Maximov, Ivan a Kowalski, Bernhard a Samuelson, Lars a

a LUND UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; CRYSTAL ORIENTATION; DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

CONCENTRIC CIRCULAR TRENCHES;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031141296 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(96)01219-5 Document Type: Article

Times cited : (5)

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