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Journal of Crystal Growth

Volumn 163, Issue 1-2, 1996, Pages 187-194

Growth, etching, doping and effects of Ar+ laser irradiation in chemical beam epitaxy of GaAs with novel precursors

(3) Tu, C W a Dong, H K a Li, N Y a

a UNIVERSITY OF CALIFORNIA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMINES; CARBON; DOPING (ADDITIVES); ETCHING; ION BOMBARDMENT; LASER BEAM EFFECTS; LOW TEMPERATURE EFFECTS; MORPHOLOGY; PHOTOCHEMICAL REACTIONS; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES;

AMINE RADICALS; CARBON DOPING SOURCE; DIIODOMETHANE; LASER ENHANCED DOPING; LASER IRRADIATION; PHOTOTHERMAL EFFECT; TRIS-DIMETHYLAMINOARSENIC;

EPITAXIAL GROWTH;

EID: 0030563555 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)01057-2 Document Type: Article

Times cited : (5)

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