Effect of the oxide-desorption temperature on the substrate-epilayer interface charge in organometallic vapor-phase epitaxy of GaAs

Applied Physics Letters

Volumn 68, Issue 15, 1996, Pages 2126-2128

  Kim, T S ^a   Files, L A ^a   Magel, L K ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3042663455     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115606     Document Type: Article

References (3)

1. T. F. Kuech, E. Marshall, G. J. Scilla, R. Potemski, C. M. Ransom, and M. Y. Hung, J. Cryst. Growth 77, 539 (1986).
2. M. L. Gary and C. W. Ebert, J. Appl. Phys. 71, 3294 (1992).
3. A. J. SpringThorpe, W. T. Moore, A. Majeed, and R. W. Streater, J. Vac. Sci. Technol. B 11, 1275 (1993).