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Volumn 11, Issue 12, 1996, Pages 1882-1887

Optoelectronic properties of as-deposited and annealed P-doped microcrystalline Si films deposited by rf glow discharge

Author keywords

[No Author keywords available]

Indexed keywords

OPTOELECTRONIC PROPERTIES; RADIO FREQUENCY GLOW DISCHARGE METHOD; SPECTROPHOTOELLIPSOMETRY (SE);

EID: 0030397525     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/12/020     Document Type: Article
Times cited : (3)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.