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Volumn 11, Issue 12, 1996, Pages 1882-1887
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Optoelectronic properties of as-deposited and annealed P-doped microcrystalline Si films deposited by rf glow discharge
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Author keywords
[No Author keywords available]
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Indexed keywords
OPTOELECTRONIC PROPERTIES;
RADIO FREQUENCY GLOW DISCHARGE METHOD;
SPECTROPHOTOELLIPSOMETRY (SE);
ANNEALING;
CRYSTAL MICROSTRUCTURE;
DIELECTRIC PROPERTIES;
GLOW DISCHARGES;
OPTOELECTRONIC DEVICES;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DOPING;
THERMAL EFFECTS;
THIN FILMS;
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EID: 0030397525
PISSN: 02681242
EISSN: None
Source Type: Journal
DOI: 10.1088/0268-1242/11/12/020 Document Type: Article |
Times cited : (3)
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References (25)
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