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Volumn 4, Issue 12, 1994, Pages 411-413

Heterostructure Barrier Varactor Simulation using an Integrated Hydrodynamic Device/Harmonic-Balance Circuit Analysis Technique

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC NETWORK ANALYSIS; EQUIVALENT CIRCUITS; FREQUENCY MULTIPLYING CIRCUITS; HARMONIC GENERATION; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS;

EID: 0028733156     PISSN: 10518207     EISSN: None     Source Type: Journal    
DOI: 10.1109/75.336230     Document Type: Article
Times cited : (13)

References (11)
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  • 2
    • 84937652912 scopus 로고
    • DC and large-signal AC electron transport properties of GaAs/InGaAs/AlGaAs heterostructure barrier varactors
    • Charlottesville, VA, Dec. 1-3
    • J. R. Jones, G. B. Tait, and S. H. Jones, “DC and large-signal AC electron transport properties of GaAs/InGaAs/AlGaAs heterostructure barrier varactors,” Proc. 1993 Int. Semiconductor Device Research Symp., Charlottesville, VA, Dec. 1–3, 1993, pp. 389–392.
    • (1993) Proc. 1993 Int. Semiconductor Device Research Symp. , pp. 389-392
    • Jones, J.R.1    Tait, G.B.2    Jones, S.H.3
  • 3
    • 84941541266 scopus 로고
    • DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor
    • submitted to
    • J. R. Jones, G. B. Tait, and S. H. Jones, “DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor,” submitted to IEEE Trans. Electron. Dev., 1994.
    • (1994) IEEE Trans. Electron. Dev.
    • Jones, J.R.1    Tait, G.B.2    Jones, S.H.3
  • 4
    • 0020180840 scopus 로고
    • Numerical analysis of heterostructure semiconductor devices
    • Sept.
    • M. S. Lundstrom and R. J. Schuelke, “Numerical analysis of heterostructure semiconductor devices,” IEEE Trans. Electron Dev., vol. ED-30, no. 9, pp. 1151–1159, Sept. 1983.
    • (1983) IEEE Trans. Electron Dev. , vol.ED-30 , Issue.9 , pp. 1151-1159
    • Lundstrom, M.S.1    Schuelke, R.J.2
  • 5
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    • Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface
    • Apr.
    • K. Horio and H. Yanai, “Numerical modeling of heterojunctions including the thermionic emission mechanism at the heterojunction interface,” IEEE Trans. Electron Dev., vol. 37, no. 4, pp. 1093–1098, Apr. 1990.
    • (1990) IEEE Trans. Electron Dev. , vol.37 , Issue.4 , pp. 1093-1098
    • Horio, K.1    Yanai, H.2
  • 6
    • 0026168675 scopus 로고
    • Electron transport in rectifying semiconductor alloy ramp heterostructures
    • June
    • G. B. Tait and C. R. Westgate, “Electron transport in rectifying semiconductor alloy ramp heterostructures,” IEEE Trans. Electron Dev., vol. ED-38, no. 6, pp. 1262–1270, June 1991.
    • (1991) IEEE Trans. Electron Dev. , vol.ED-38 , Issue.6 , pp. 1262-1270
    • Tait, G.B.1    Westgate, C.R.2
  • 7
    • 0040906487 scopus 로고
    • A revised boundary condition for the numerical analysis of schottky barrier diodes
    • Sept.
    • J. G. Adams and T. W. Tang, “A revised boundary condition for the numerical analysis of schottky barrier diodes,” IEEE Electron. Dev. Lett., vol. ED-7, no. 9, pp. 525–527, Sept. 1986.
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  • 8
    • 0024960638 scopus 로고
    • Computer simulation of boundary conditions for schottky barrier diodes
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    • J. G. Adams and T. W. Tang, “Computer simulation of boundary conditions for schottky barrier diodes,” Electon. Lett., vol. 25, no. 16, pp. 1098–1100, Aug. 1989.
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  • 9
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    • P. H. Siegel, A. R. Kerr, and W. Hwang, “Topics in the optimization of millimeter-wave mixers,” NASA Tech. Papers, no. 2287, Mar. 1984.
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  • 10
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    • Iterative Solution of Nonlinear Equations in Several Variables
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.