OHMIC CONTACTS TO n-GaAs USING GRADED BAND GAP LAYERS OF Ga1 - xInxAs GROWN BY MOLECULAR BEAM EPITAXY.

Journal of vacuum science & technology

Volumn 19, Issue 3, 1981, Pages 626-627

  Woodall, J M ^a   Freeouf, J L ^a   Pettit, G D ^a   Jackson, T ^a   Kirchner, P ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS - THIN FILMS; SEMICONDUCTOR DEVICES - CONTACTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0019613257     PISSN: 00225355     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.571074     Document Type: Conference Paper

References (9)