Power silicon carbide devices based on Lely grown substrates

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1995, Pages 90-95

  Lebedev, A A ^a   Andreev, A N ^a   Anikin, M M ^a   Rastegaeva, G ^a   Savkina, N S ^a   Strel'chuk, A M ^a   Syrkin, A L ^a   Tregubova, A S ^a   Chelnokov, V E ^a  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; ELECTRIC CONDUCTIVITY OF SOLIDS; ENERGY GAP; EPITAXIAL GROWTH; POLYCRYSTALLINE MATERIALS; SILICON CARBIDE; SUBLIMATION; SUBSTRATES; SURFACES; THERMAL EFFECTS;

DEEP CENTERS; LELY METHOD;

POWER ELECTRONICS;

EID: 0029179069     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)