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Volumn 46, Issue 1-3, 1997, Pages 300-303
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Growth and investigation of epitaxial 6H-SiC layers obtained by CVD on Lely-grown substrates
a a a a |
Author keywords
6H SiC substrates; Lely substrate; SiC epilayers
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Indexed keywords
CHEMICAL VAPOR DEPOSITION;
CRYSTAL STRUCTURE;
EPITAXIAL GROWTH;
ETCHING;
SCHOTTKY BARRIER DIODES;
SILICON CARBIDE;
SUBLIMATION;
SUBSTRATES;
LELY SUBSTRATES;
HETEROJUNCTIONS;
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EID: 0000935023
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(97)00005-6 Document Type: Article |
Times cited : (7)
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References (14)
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