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Volumn 46, Issue 1-3, 1997, Pages 300-303

Growth and investigation of epitaxial 6H-SiC layers obtained by CVD on Lely-grown substrates

Author keywords

6H SiC substrates; Lely substrate; SiC epilayers

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; ETCHING; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SUBLIMATION; SUBSTRATES;

EID: 0000935023     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00005-6     Document Type: Article
Times cited : (7)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.