Dislocations and precipitates in semi-insulating gallium arsenide revealed by ultrasonic Abrahams-Buiocchi etching

Journal of Crystal Growth

Volumn 167, Issue 3-4, 1996, Pages 766-768

  Chen, Nuofu ^a   He, Hongjia ^a   Wang, Yutian ^a   Pan, Kun ^a   Lin, Lanying ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; ATOMS; DISLOCATIONS (CRYSTALS); ETCHING; MOLTEN MATERIALS; POTASSIUM COMPOUNDS; SCANNING ELECTRON MICROSCOPY; ULTRASONIC APPLICATIONS; X RAY SPECTROSCOPY;

DEFORMATION ENERGY; ENERGY DISPERSIVE X RAY SPECTROMETER; METALLOSCOPE; PRECIPITATES; ULTRASONIC AIDED ABRAHAMS-BUIOCCHI ETCHING;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030259709     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(96)00462-9     Document Type: Article

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