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Volumn 388, Issue 3, 1997, Pages 283-288

Issues for deep level models of bulk damage to silicon detectors

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; IRRADIATION; MATHEMATICAL MODELS; RADIATION DAMAGE; SILICON;

EID: 0031116898     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(96)01256-9     Document Type: Article
Times cited : (3)

References (16)
  • 8
    • 0042443592 scopus 로고
    • Ph.D thesis, Imperial College, RALT-025
    • S. Sotthibandhu, Ph.D thesis, Imperial College, RALT-025 (1994).
    • (1994)
    • Sotthibandhu, S.1
  • 14
    • 0031122021 scopus 로고    scopus 로고
    • Int. conf. on radiation effects on semiconductor materials, detectors and devices, Florence, Italy, 1996
    • B. MacEvoy, these Proceedings (Int. Conf. on Radiation Effects on Semiconductor Materials, Detectors and Devices, Florence, Italy, 1996), Nucl. Instr. and Meth. A 388 (1997) 365.
    • (1997) Nucl. Instr. and Meth. A , vol.388 , pp. 365
    • MacEvoy, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.