Optical characterization of InAs monolayer quantum structures grown on (311)A, (311)B, and (100) GaAs substrates

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 471-474

  Xu, S J ^b,c,d   Chua, S J ^{a,b,e,f,g,h,i}   Zhang, Xiong ^b,h,j,k,l   Zhang, Z H ^b,m   Luo, C P ^c   Yuan, Z L ^c   Xu, Z Y ^c   Zhou, J M ^c  

^a IEEE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c INSTITUTE OF SEMICONDUCTORS   (China)

^d XI'AN JIAOTONG UNIVERSITY   (China)

^e CARDIFF UNIVERSITY   (United Kingdom)

^f Telecommunications Laboratories   (United Kingdom)

^g Fraunhofer Inst Semiconduct T   (Germany)

^h Department of Electrical and Computer Engineering   (Singapore)

ⁱ Institute of Microelectronics   (Bulgaria)

^j UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^k UNIVERSITY OF TOKYO   (Japan)

^l OLYMPUS CORPORATION   (Japan)

^m CHANGCHUN INSTITUTE OF OPTICS   (China)

more..

Author keywords

Photoluminescent materials devices; Quantum wells; Semiconductor heterojunctions; Semiconductor lasers; Semiconductor measurements

Indexed keywords

ELECTRON TRANSITIONS; HETEROJUNCTIONS; LOW TEMPERATURE PROPERTIES; MOLECULAR BEAM EPITAXY; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CRYSTAL QUALITY; EXCITATION SPECTROSCOPY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031108482     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605695     Document Type: Article

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