Effects of bandgap, lifetime, and other nonuniformities on diode laser thresholds and slope efficiencies

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 475-484

  Vurgaftman, Igor ^a,b,c   Meyer, Jerry R ^a,d,e  

^a NAVAL RESEARCH LABORATORY   (United States)

^b BOSTON UNIVERSITY   (United States)

^c UNIVERSITY OF MICHIGAN   (United States)

^d UNIVERSITY OF TENNESSEE   (United States)

^e BROWN UNIVERSITY   (United States)

Author keywords

Charge carrier processes; CW lasers; Quantum well lasers; Semiconductor device modeling; Semiconductor lasers; Semiconductor superlattices

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; CONTINUOUS WAVE LASERS; CURRENT DENSITY; ENERGY GAP; LASER MODES; LIGHT EMISSION; PHOTONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR SUPERLATTICES; SPECTRUM ANALYSIS;

CARRIER TEMPERATURE; LIGHT CURRENT CHARACTERISTICS;

QUANTUM WELL LASERS;

EID: 0031108452     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605697     Document Type: Article

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