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Volumn 172, Issue 3-4, 1997, Pages 404-415

Microstructure evolution and non-diamond carbon incorporation in CVD diamond thin films grown at low substrate temperatures

Author keywords

(Micro)structure; Diamond domain border; Low temperature growth; Re entrant corner growth; TEM; Two dimensional nucleation

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); MICROSTRUCTURE; NUCLEATION; RAMAN SPECTROSCOPY; TEMPERATURE; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; TWINNING; X RAY CRYSTALLOGRAPHY;

EID: 0031103779     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00772-5     Document Type: Article
Times cited : (35)

References (21)
  • 9
    • 30244488642 scopus 로고    scopus 로고
    • note
    • According to Angus et al. [10] a pair of parallel stacking errors in parallel {111} planes can be classified by the number n of correct stacking between them. For n = 0, 1 we term this configuration as stacking fault, for n > 1 as microtwin and for very large n as twin band. For simplicity we will often refer to any pair of parallel stacking faults as a twin in this paper.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.