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Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 276-279

Raman spectroscopy and selective pair luminescence on ZnSe:N

(5) Albert, D a Kraus, J a Kurtz, E a Einfeldt, S a,b Hommel, D a,b

a UNIVERSITY OF WÜRZBURG (Germany)

b UNIVERSITY OF BREMEN (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; IONIZATION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; NITROGEN; PHONONS; PLASMA SOURCES; RAMAN SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; THERMAL EFFECTS;

COMPENSATION PROCESSES; HOLE MOBILITY; SELECTIVE PAIR LUMINESCENCE;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 0030562181 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/0022-0248(95)00814-4 Document Type: Article

Times cited : (7)

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