Process improvements in the selective epitaxial growth of Si1-xGex/Si strained layers in a conventional hot-wall LPCVD system

Journal of the Electrochemical Society

Volumn 144, Issue 3, 1997, Pages 1095-1099

  Lee, I Ming ^a   Takoudis, Christos G ^a,b,c   Wang, Wei Chung ^a   Denton, John P ^a   Neudeck, Gerold W ^a   Koh, Michael T K ^a   Kvam, Eric P ^a  

^a PURDUE UNIVERSITY   (United States)

^b ELECTROCHEMICAL SOCIETY

^c University of Illinois at Chicago   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL EFFECTS; THERMODYNAMICS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); SELECTIVE EPITAXIAL GROWTH (SEG); SILICON GERMANIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031099948     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837538     Document Type: Article

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