High-Frequency GalnAsP/InP Laser Mesas in (— 110) Direction with Thick Semi-insulating InP:Fe

IEEE Photonics Technology Letters

Volumn 5, Issue 10, 1993, Pages 1119-1122

  Lourdudoss, S ^a   Kjebon, O ^a   Wallin, J ^a   Lindgren, S ^a  

^a SWEDISH INSTITUTE OF COMPUTER SCIENCE   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; EPITAXIAL GROWTH; FABRICATION; INTEGRATED OPTOELECTRONICS; IRON; LIGHT MODULATION; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THICK FILMS;

BURIED HETEROSTRUCTURES; GALLIUM INDIUM ARSENIC PHOSPHIDE; IRON DOPED INDIUM PHOSPHIDE; LASER MESAS; PARASITIC CAPACITANCE;

SEMICONDUCTOR LASERS;

EID: 0027682062     PISSN: 10411135     EISSN: 19410174     Source Type: Journal    
DOI: 10.1109/68.248400     Document Type: Article

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