25 GHz bandwidth 1.55µm GaInAsP p-doped strained multiquantum-well lasers

Electronics Letters

Volumn 28, Issue 23, 1992, Pages 2156-2157

  Morton, P A ^a   Logan, R A ^a   Tanbun Ek, T ^a   Sciortino, P F ^a   Sergent, A M ^a   Montgomery, R K ^a   Lee, B T ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

Modulation bandwidth; Quantum well lasers

Indexed keywords

ELECTRON TRANSPORT PROPERTIES; MODULATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS;

BANDWIDTH LIMITATIONS; HOLE TRANSPORT; MULTIQUANTUM WELL LASERS; PREDICTED INTRINSIC DEVICE BANDWIDTH; SEMICONDUCTING GALLIUM INDIUM ARSENIC PHOSPHIDE;

SEMICONDUCTOR LASERS;

EID: 0027112910     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19921384     Document Type: Article

References (11)

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