Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodes

Applied Physics Letters

Volumn 58, Issue 6, 1991, Pages 616-618

  Haase, M A ^a   Hafich, M J ^b   Robinson, G Y ^b  

^a 3M COMPANY   (United States)

^b Department of Environmental and Radiological Health Sciences

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000781134     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.104574     Document Type: Article

References (10)