GaInP/GaAs Double Heterojunction Bipolar Transistor with High fT, fmax, and Breakdown Voltage

IEEE Electron Device Letters

Volumn 15, Issue 1, 1994, Pages 10-12

  Song, Jong In ^a   Caneau, Catherine ^a   Chough, Kyung Bae ^a   Hong, W P ^a  

^a TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT COLLECTORS; HETEROJUNCTIONS; OHMIC CONTACTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

CURRENT VOLTAGE CHARACTERISTIC; DOUBLE HETEROJUNCTION BIPOLAR TRANSISTOR; EMITTER BASE JUNCTION; HETEROJUNCTION BIPOLAR TRANSISTOR; SELF ALIGNED EMITTER TRANSISTOR; SINGLE HETEROJUNCTION BIPOLAR TRANSISTOR;

BIPOLAR TRANSISTORS;

EID: 0028256987     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.289478     Document Type: Article

References (13)

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