Analysis of GaAs substrate removal etching with citric acid:H2O2 and NH4OH:H2O2 for application to compliant substrates

Journal of the Electrochemical Society

Volumn 144, Issue 2, 1997, Pages

  Carter Coman, Carrie ^a,d   Bicknell Tassius, Robert ^a,b   Benz, Rudolph G ^a,c   Brown, April S ^a   Jokerst, Nan Marie ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^c ITT Night Vision   (United States)

^d ELECTROCHEMICAL SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACIDS; REFRACTIVE INDEX; REMOVAL; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THIN FILMS;

CITRIC ACID; SUBSTRATE REMOVAL;

ETCHING;

EID: 0031077182     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1837422     Document Type: Article

References (16)

1. See, for example, S. Daryanani, H. Fathollahnejad, D. L. Mathine, R. Droopad, and G. N. Maracas, Electron. Lett., 31, 833 (1995).
2. C. Juang, K. J. Kuhn, and R. B. Darling, J. Vac. Sci. Technol. B, 8, 1122 (1990).
3. G. C. DeSalvo, W. F. Tseng, and J. Comas, This Journal, 139, 831 (1992).
4. B.-Y. Mao, J. A. Nielsen, R. A. Friedman, and G. Y. Lee, ibid., 141, 1082 (1994).
5. K. Kenefick, ibid., 129, 2380 (1982).
6. J. J. Lepore, J. Appl. Phys., 51, 6441 (1980).
7. M. Otsubo, T. Oda, H. Kumabe, and H. Miki, This Journal, 123, 676 (1976).
8. M. Schneider, C. Colvard, K. Alavi, and E. Kohn, SPIE, 797, 149 (1987).
9. E. Kohn, This Journal, 127, 505 (1980).
10. M. Tong, D. G. Ballegeer, A. Ketterson, E. J. Roan, K. Y. Cheng, and I. Adesida, J. Electron. Mater., 21, 9 (1992).
11. C. Carter-Coman, A. S. Brown, N. M. Jokerst, D. E. Dawson, R. Bicknell-Tassius, Z. C. Feng, K. C. Rajkumar, and G. Dagnall, ibid., 25, 1044 (1996).
12. C. Carter-Coman, A. S. Brown, R. Bicknell-Tassius, N. M. Jokerst, F. Fournier, and D. E. Dawson, J. Vac. Sci. Technol. B., 14, 2170 (1996).
13. C. Carter-Coman, A. S. Brown, R. Bicknell-Tassius, N. M. Jokerst, and M. Allen, Appl. Phys. Lett, 69, 257 (1996).
14. Y. H. Lo, ibid., 59, 2311 (1991).
15. E. F. Schubert, M. Passlack, M. Hong, J. Mannerts, R. L. Opila, L. N. Pfeiffer, K. W. West, C. G. Bethea, and G. J. Zydzuik, ibid., 64, 2976 (1994).
16. See for example, A. R. Sugg, E. I. Chen, N. Holonyak, Jr., K. C. Hsieh, J. E. Baker, and N. Finnegan, J. Appl. Phys., 74, 3880 (1993).