Structural and optical properties of 1.3 μm wavelength tensile-strained InGaAsP multiquantum wells grown by metalorganic molecular beam epitaxy

Journal of Applied Physics

Volumn 81, Issue 3, 1997, Pages 1427-1433

  Sugiura, Hideo ^a   Mitsuhara, Manabu ^a   Ogasawara, Matsuyuki ^a   Itoh, Masayuki ^a   Kamada, Hidehiko ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CRYSTAL STRUCTURE; CURRENT DENSITY; DECOMPOSITION; DISLOCATIONS (CRYSTALS); MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

CARRIER LIFETIME MEASUREMENT; INDIUM GALLIUM ARSENIC PHOSPHIDE; SEPARATE CONFINEMENT DOUBLE HETEROSTRUCTURES; VARSHNI FORMULA;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0031077067     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364180     Document Type: Article

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