Metalorganic molecular beam epitaxy of 1.3 μm wavelength tensile-strained InGaAsP multi-quantum-well lasers

Applied Physics Letters

Volumn 68, Issue 23, 1996, Pages 3213-3215

  Sugiura, Hideo ^a   Itoh, Masayuki ^a   Yamamoto, Norio ^a   Ogasawara, Matsuyuki ^a   Kishi, Kennji ^a   Kondo, Yasuhiro ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; INTERFACES (MATERIALS); LASER RESONATORS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; ORGANOMETALLICS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

INDIUM GALLIUM ARSENIC PHOSPHIDE; LATTICE MISMATCH; METALLORGANIC MOLECULAR BEAM EPITAXY; SEPARATE CONFINEMENT DOUBLE HETEROSTRUCTURE;

QUANTUM WELL LASERS;

EID: 0030567630     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116440     Document Type: Article

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