High performance self-aligned SiGe p-type modulation-doped field-effect transistors

Annual Device Research Conference Digest

Volumn , Issue , 1996, Pages 24-25

  Arafa, M ^a   Ismail, K ^a   Chu, J O ^a   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; ELECTRON BEAM LITHOGRAPHY; ELECTRON TRANSPORT PROPERTIES; ETCHING; EVAPORATION; GATES (TRANSISTOR); HETEROJUNCTIONS; OHMIC CONTACTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TRANSCONDUCTANCE;

GAIN CUT OFF FREQUENCY; ISOLATION; MESA ETCHING; MODULATION DOPED FIELD EFFECT TRANSISTORS; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

FIELD EFFECT TRANSISTORS;

EID: 0029717327     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)