1.3-μm GaInAsP/InP multi-quantum-well surface-emitting lasers

Optical Review

Volumn 3, Issue 2, 1996, Pages 59-61

  Uchiyama, Seiji ^a   Ninomiya, Takao ^a  

^a Optoelectronics Furukawa Laboratory   (Japan)

Author keywords

Buried heterostructure; GaInAsP InP; Low threshold current; Multi quantum well; Si Al2O3; Surface emitting laser

Indexed keywords

EID: 0030503171     PISSN: 13406000     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10043-996-0059-9     Document Type: Article

References (9)

1. S. Uchiyama and K. Iga: IEEE J. Quantum Electron. QE-22 (1986) 302.
2. H. Wada, D.I. Babic, D.L. Crawford, T.E. Reynolds, J.J. Dudley, J.E. Bowers, E.L. Hu, J.L. Merz, B.I. Miller, U. Koren and M.G. Young: IEEE Photon. Technol. Lett. 3 (1991) 977.
3. T. Baba, Y. Yogo, K. Suzuki, F. Koyama and K. Iga: Electron. Lett. 29 (1993) 913.
4. J.J. Dudley, D.I. Babic, R. Mirin, L. Yang, B.I. Miller, R.J. Ram, T. Reynolds, E.L. Hu and J.E. Bowers: Appl. Phys. Lett. 64 (1994) 1463.
5. S. Uchiyama and S. Kashiwa: IEICE Trans. Electron. E78-C (1995) 1311.
6. S. Uchiyama and S. Kashiwa: Electron. Lett. 31 (1995) 1449.
7. K. Uomi, S.J.B. Yoo, A. Scherer, R. Bhat, N. Andreadakis, C. E. Zah, M.A. Koza and T.P. Lee: IEEE Photon. Technol. Lett. 6 (1994) 317.
8. C.L. Chua, Z.H. Zhu, Y.H. Lo, R.Bhat and M. Hong: IEEE Photon. Technol. Lett. 7 (1995) 444.
9. D.I. Babic, K. Streuble, R.P. Mirin, N.M. Margalit, J.E. Bowers, E.L. Hu, D.E. Mars, L. Yang and K. Carey: IEEE Photon. Technol. Lett. 7 (1995) 1225.