Positron characterization of defects formed during solid phase epitaxy of cobalt suicide

Semiconductor Science and Technology

Volumn 12, Issue 2, 1997, Pages 173-178

  Knights, A P ^b   Ponjee M W G ^a,b   Simpson, P J ^b   Zinke Allmang, M ^b   Carlow, G R ^b  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT COMPOUNDS; CRYSTAL DEFECTS; DISLOCATIONS (CRYSTALS); DOPPLER EFFECT; EPITAXIAL GROWTH; GRAIN BOUNDARIES; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

COBALT SILICIDE; POSITRON ANNIHILATION SPECTROSCOPY; SOLID PHASE EPITAXY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0031075385     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/2/004     Document Type: Article

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