Positron beam study of annealed silicon nitride films

Journal of Applied Physics

Volumn 79, Issue 5, 1996, Pages 2458-2462

  Landheer, D ^a   Aers, G C ^a   Sproule, G I ^a   Lawther, D W ^b   Simpson, P J ^b   Massoumi, G R ^b   Tong, S Y ^c  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^b UNIVERSITY OF WESTERN ONTARIO   (Canada)

^c MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3643050867     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.361173     Document Type: Article

References (21)

1. D. Landheer, G. C. Aers, G. I. Sproule, R. Khatri, P. J. Simpson, and S. C. Gujrathi, J. Appl. Phys. 78, 2568 (1995).
2. P. J. Schultz and K. G. Lynn, Rev. Mod. Phys. 60, 701 (1988).
3. P. Asoka-Kumar, K. G. Lynn, and D. O. Welch, J. Appl. Phys. 76, 4935 (1994).
4. I. V. Mitchell, P. J. Simpson, P. J. Schultz, M. Vos, U. Akano, and C. Wu, in Positron Beams for Solids and Surfaces, AIP Conf. Proc. No. 218, edited by P. J. Schultz, G. R. Massoumi, and P. J. Simpson (AIP, New York, 1990), p. 121; P. J. Simpson, M. Vos, I. V. Mitchell, C. Wu, and P. J. Schultz, Phys. Rev. B 44, 12180 (1991).
5. I. V. Mitchell, P. J. Simpson, P. J. Schultz, M. Vos, U. Akano, and C. Wu, in Positron Beams for Solids and Surfaces, AIP Conf. Proc. No. 218, edited by P. J. Schultz, G. R. Massoumi, and P. J. Simpson (AIP, New York, 1990), p. 121; P. J. Simpson, M. Vos, I. V. Mitchell, C. Wu, and P. J. Schultz, Phys. Rev. B 44, 12180 (1991).
6. R. A. Hakvoort, "Applications of Positron Depth Profiling," Ph.D. thesis, Reactor Physics Department of the Interfaculty Reactor Institute, Delft University of Technology, 1993.
7. H. J. Gossmann, P. Asoka-Kumar, T. C. Leung, Bent Nielsen, K. G. Lynn, F. C. Unterwald, and L. C. Feldman, Appl. Phys. Lett. 61, 540 (1992).
8. K. G. Lynn, B. Nielsen, and D. O. Welch, Can. J. Phys. 67, 818 (1989).
9. G. W. Rubloff, B. Nielsen, K. G. Lynn, D. O. Welch, and T. C. Leung, Vacuum 41, 790 (1990).
10. R. A. Hakvoort, H. Schut, A. van Veen, W. M. Arnold Bik, and F. H. P. M. Habraken, Appl. Phys. Lett. 59, 1687 (1991).
11. F. H. P. M. Habraken, M. Heyns, H. E. Maes, R. de Keersmaecker, A. E. T. Kuiper, and W. F. van der Weg, in Low Pressure Chemical Vapor Deposited Silicon Oxynitride Films, Material and Applications, edited by F. H. P. M. Habraken (Springer, Heidelberg, 1991), Research Reports ESPRIT, p. 118.
12. M. Heyns, J. Remmerie, E. Dooms, H. Maes, and R. de Keersmaecker, in Low Pressure Chemical Vapor Deposited Silicon Oxynitride Films, Material and Applications, edited by F. H. P. M. Habraken (Springer, Heidelberg, 1991), Research Reports ESPRIT, p. 82.
13. D. D. Perovic, G. C. Weatherly, P. J. Simpson, P. J. Schultz, T. E. Jackman, G. C. Aers, J.-P. Noël, and D. C. Houghton, Phys. Rev. B 43, 14257 (1991).
14. W. A. Landford, Nucl. Instrum. Methods B 66, 65 (1992).
15. W. A. Landford and M. J. Rand, J. Appl. Phys. 49, 2473 (1978).
16. D. L. Smith, A. S. Alimonda, C.-C. Chen, S. E. Ready, and B. Wacher, J. Electrochem. Soc. 137, 614 (1990).
17. D. L. Smith, Mater. Res. Soc. Symp. Proc. 165, 69 (1990).
18. P. J. Schultz, Nucl. Instrum. Methods B 30, 94 (1988).
19. P. J. Schultz, E. Tandberg, K. G. Lynn, B. Nielsen, T. E. Jackman, M. W. Denhoff, and G. C. Aers, Phys. Rev. Lett. 61, 187 (1988).
20. R. D. Goldberg, P. J. Schultz, and P. J. Simpson, Appl. Surf. Sci. 85, 287 (1995).
21. Z. Lu, P. Santos-Filho, G. Stevens, M. J. Williams, and G. Lucovsky, J. Vac. Sci. Technol. A 13, 607 (1995).