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Volumn 35, Issue 1-4, 1997, Pages 393-396

Embossing of nanoscale features and environments

Author keywords

[No Author keywords available]

Indexed keywords

CELLULOSE DERIVATIVES; DRY ETCHING; ELECTRON BEAM LITHOGRAPHY; ELECTROPLATING; FABRICATION; PHOTOLITHOGRAPHY; PLASTICS APPLICATIONS; THERMOPLASTICS;

EID: 0031074741     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(96)00208-0     Document Type: Article
Times cited : (41)

References (6)
  • 3
    • 0031069314 scopus 로고    scopus 로고
    • Anisotropic pattern transfer of fine resist features to silicon nitride via an intermediate titanium layer
    • A. Midha, S.K. Murad, J.M.R. Weaver, Anisotropic Pattern Transfer of Fine Resist Features to Silicon Nitride Via an Intermediate Titanium Layer, to be published Microelectronic Engineering (1997).
    • (1997) Microelectronic Engineering
    • Midha, A.1    Murad, S.K.2    Weaver, J.M.R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.